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FDP10N60NZ - N-Channel MOSFET

Download the FDP10N60NZ datasheet PDF. This datasheet also covers the FDPF10N60NZ variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

Key Features

  • RDS(on) = 640 mΩ (Typ. ) @ VGS = 10 V, ID = 5 A.
  • Low Gate Charge (Typ. 23 nC).
  • Low Crss (Typ. 10 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Improved Capability.
  • RoHS Compliant FDP10N60NZ / FDPF10N60NZ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDPF10N60NZ_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDP10N60ZU MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET November 2013 N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features • RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 23 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant FDP10N60NZ / FDPF10N60NZ Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress.