FDP10N60NZ Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress.
FDP10N60NZ Key Features
- RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A
- Low Gate Charge (Typ. 23 nC)
- Low Crss (Typ. 10 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Improved Capability
- RoHS pliant