Datasheet Summary
FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
FDP10N60ZU / FDPF10N60ZUT
N-Channel MOSFET, FRFET
600V, 9A, 0.8Ω
April 2009
UniFETTM tm
Features
- RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A
- Low gate charge ( Typ. 31nC)
- Low Crss ( Typ. 15pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are...