FDS6673BZ_F085 Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDS6673BZ_F085 Key Features
- Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
- Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
- Extended VGS range (-25V) for battery