FDS8447 Description
This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDS8447 Key Features
- Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A
- Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A
- Low gate charge
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- RoHS pliant