FDS86242 Description
Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
FDS86242 Key Features
- Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
- Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS pliant