Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
150 V, 4.1 A, 67 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.
Features
- Max rDS(on) = 67 mW at VGS = 10 V, ID = 4.1 A
- Max rDS(on) = 98 mW at VGS = 6 V, ID = 3.3 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- 100% UIL Tested
- ESD Protection Level: HBM > 500 V, CDM > 2 kV
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications
- DC/DC Converters and Off- Line UPS
- Distributed Power Architectures...
