FDS8817NZ Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A Max rDS(on) = 10mΩ at VGS = 4.5V, ID =12.6A HBM ESD protection level of...