Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
30 V, 15 A, 7.0 mW
FDS8817NZ, FDS8817NZ-G
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A
- Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A
- HBM ESD Protection Level of 3.8 kV Typical-
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability
- These Devices are Pb- Free and are RoHS...
