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FDS8817NZ - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Key Features

  • Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A.
  • Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A.
  • HBM ESD Protection Level of 3.8 kV Typical.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant Specifications MOSFET.

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Datasheet Details

Part number FDS8817NZ
Manufacturer onsemi
File Size 297.20 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS8817NZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 30 V, 15 A, 7.0 mW FDS8817NZ, FDS8817NZ-G General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A • Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A • HBM ESD Protection Level of 3.