Datasheet Summary
FDS8817NZ N-Channel PowerTrench® MOSFET
March 2007
N-Channel
30V, 15A, 7.0mΩ Features
PowerTrench® tm
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
- Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A
- Max rDS(on) = 10mΩ at VGS = 4.5V, ID =12.6A
- HBM ESD protection level of 3.8kV typical (note 3)
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
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