FDS8812NZ Overview
Description
Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A - Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A - HBM ESD protection level of 6.4KV typical (note 3) - High performance trench technology for extremely low rDS(on) - High power and current handling capability - RoHS compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
