Datasheet Details
| Part number | FDS8812NZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 469.83 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDS8812NZ_FairchildSemiconductor.pdf |
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Overview: FDS8812NZ N-Channel PowerTrench® MOSFET November 2008 FDS8812NZ N-Channel PowerTrench® MOSFET 30V, 20A, 4.
| Part number | FDS8812NZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 469.83 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDS8812NZ_FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A HBM ESD protection level of 6.4KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
D D D G D D D S SO-8 G D S S S Pin 1 S D S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking FDS8812NZ Device FDS8812NZ Reel Size 13” (Note 1a) (Note 4) (Note 1a) (Note 1b) Ratings 30 ±20 20 80 661 2.5 1.0 -55 to +150 Units V V A mJ W °C (Note 1) 25 (Note 1a) 50 (Note 1b) 125 °C/W Tape Width 12mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation 1 FDS8812NZ Rev.C1 www.fairchildsemi.com FDS8812NZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V 30 ID = 25
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