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FDS8812NZ - N-Channel MOSFET

General Description

Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A HBM ESD protection level of 6.4KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability

Key Features

  • General.

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FDS8812NZ N-Channel PowerTrench® MOSFET November 2008 FDS8812NZ N-Channel PowerTrench® MOSFET 30V, 20A, 4.0mΩ Features General Description „ Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A „ Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A „ HBM ESD protection level of 6.4KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.