FDS8812NZ Datasheet | Fairchild Semiconductor

FDS8812NZ N-Channel Power Trench® MOSFET November 2008 N-Channel Power Trench® MOSFET 30V, 20A, 4.0mΩ Features General Description - Max r DS(on) = 4.0mΩ at VGS = 10V, ID = 20A - Max r DS(on) = 4.9mΩ at VGS = 4.5V, ID =18A - HBM ESD protection level of 6.4KV typical (note 3) - High performance trench technology for extremely low r DS(on) - High power and current handling capability - Ro HS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. SO-8 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking FDS8812NZ Device FDS8812NZ Reel Size 13” (Note 1a) (Note 4) (Note 1a) (Note...