Datasheet4U Logo Datasheet4U.com

FDS8813NZ - N-Channel MOSFET

General Description

Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A HBM ESD protection level of 5.6KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS8817NZ N-Channel MOSFET ON Semiconductor
FDS8840NZ N-Channel MOSFET ON Semiconductor
FDS8858CZ Dual-Channel MOSFET ON Semiconductor
FDS8876 N-Channel MOSFET ON Semiconductor
FDS8878 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDS8812NZ N-Channel MOSFET
FDS8817NZ N-Channel MOSFET
FDS8840NZ N-Channel MOSFET
FDS8842NZ N-Channel MOSFET
FDS8858CZ MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS8813NZ N-Channel PowerTrench® MOSFET May 2013 FDS8813NZ N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ Features General Description „ Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A „ Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A „ HBM ESD protection level of 5.6KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.