FDS8813NZ Datasheet | Fairchild Semiconductor

FDS8813NZ N-Channel Power Trench® MOSFET May 2013 N-Channel Power Trench® MOSFET 30V, 18.5A, 4.5mΩ Features General Description - Max r DS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A - Max r DS(on) = 6.0mΩ at VGS = 4.5V, ID =16A - HBM ESD protection level of 5.6KV typical (note 3) - High performance trench technology for extremely low r DS(on) - High power and current handling capability - Ro HS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. SO-8 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking FDS8813NZ Device FDS8813NZ Reel Size 13” (Note 1a) (Note 4) (Note 1a) (Note...