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FDS8817NZ Datasheet

The FDS8817NZ is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFDS8817NZ
Manufactureronsemi
Overview This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and.
* Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A
* HBM ESD Protection Level of 3.8 kV Typical*
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability
* These Devices are Pb
*Free and are RoHS Compliant.
Part NumberFDS8817NZ
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Po. PowerTrench® tm MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common .