FOD815 Description
The FOD815 consists of a gallium arsenide infrared emitting diode, driving a silicon photodarlington output in a 4-pin dual in-line package. Functional Block Diagram ANODE 1 4 COLLECTOR .. 75 7,500 1 300 250 Unit mA % V KHz µs µs.
FOD815 Key Features
- Applicable to Pb-free IR reflow soldering
- pact 4-pin package
- High current transfer ratio: 600% minimum
- C-UL, UL, and VDE approved
- High input-output isolation voltage of 5000Vrms
- Higher operating temperature (versus H11B815)