MOCD223-M Description
The MOCD223-M consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications that require low input current and eliminates the need for through-the-board mounting.
MOCD223-M Key Features
- U.L. Recognized (File #E90700, Volume 2)
- VDE Recognized (File #13616) (add option “V” for VDE approval, i.e, MOCD223V-M)
- Convenient Plastic SOIC-8 Surface Mountable Package Style
- High Current Transfer Ratio of 500% Minimum at IF = 1 mA
- Minimum BVCEO of 30 Volts Guaranteed
- Standard SOIC-8 Footprint, with 0.050" Lead Spacing
- patible with Dual Wave, Vapor Phase and IR Reflow Soldering
- High Input-Output Isolation Voltage of 2500 VAC(rms) Guaranteed