P16N25 Overview
Key Specifications
Package: TO-220AB
Mount Type: Through Hole
Pins: 3
Height: 9.4 mm
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 16 A, 250 V, RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 8.0 A
- Low Gate Charge (Typ. 27 nC)
- Low Crss (Typ. 23 pF)
- 100% Avalanche Tested D GDS TO-220 G
