P16N25 Datasheet and Specifications PDF

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .

* 16 A, 250 V, RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 8.0 A
* Low Gate Charge (Typ. 27 nC)
* Low Crss (Typ. 23 pF)
* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-So.

SHENZHEN ICHON TECH. CO., LTD P16N25 TO-220

 

  
   
  
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