PN2369 Description
MMBT2369 / PN2369 NPN Switching Transistor MMBT2369 / PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. February 2008 MMBT2369 PN2369 C E B SOT-23 Mark: Collector Ratings Ta = 25×C unless otherwise noted Symbol Parameter VCEO VCBO VEBO IC ICP TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector...