FMA219 Datasheet | Filtronic Compound Semiconductors

X-BAND LNA MMIC Features : - - - - - - 7.0 - 11.0 GHz Operating Bandwidth 1.1 d B Noise Figure 21 d B Small-Signal Gain 12 d Bm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports Datasheet v3.0 LAYOUT: GENERAL .. DESCRIPTION: The FMA219 is a 2-stage, reactively matched p HEMT low-noise MMIC amplifier designed for use over 7.0 to 11.0 GHz. The amplifier requires a single +3V supply and one off-chip ponent for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. The amplifier is unconditionally stable over all load states (-45 to +85°C), and conditionally stable if the input port is open-circuited. TYPICAL APPLICATIONS: - - Low noise front end amplifiers General X-Band gain block ELECTRICAL SPECIFICATIONS: PARAMETER Operating Frequency Bandwidth Small Signal Gain Operating Current Small Signal Gain Flatness Noise Figure SYMBOL BW S21 IOP ∆S21 NF CONDITIONS VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP No RF input VDD = +3 V IDD = IOP VDD = +3 V, IDD = IOP VDD = +3 V, IDD = IOP POUT = +1.5 d Bm SCL VDD = +3 V VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP 7 19 50 UNITS GHz d B m A 21 65 ±0.5 1.1 23 80 ±0.8 1.4 d B 3rd Order Intermodulation Distortion Power at 1d B pression Input Return Loss Input Return Loss @ 9.5GHz + 10GHz Output Return Loss Reverse Isolation IMD P1d B S11 S11(9.5+10GHz) S22 S12 -47 11.5 12.5 -7 -3 -4 -16 -40 -10 -30 d Bc d Bm d B d B d B d B Note: TAMBIENT =...