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FMA219 - X-BAND LNA MMIC

General Description

The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0 to 11.0 GHz.

The amplifier requires a single +3V supply and one off-chip component for supply de-coupling.

Both the input and output ports are DC de-coupled.

Key Features

  • 7.0.
  • 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports Datasheet v3.0 LAYOUT:.

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Datasheet Details

Part number FMA219
Manufacturer Filtronic Compound Semiconductors
File Size 491.12 KB
Description X-BAND LNA MMIC
Datasheet download datasheet FMA219 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FMA219 X-BAND LNA MMIC FEATURES: • • • • • • 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports Datasheet v3.0 LAYOUT: GENERAL www.DataSheet4U.com DESCRIPTION: The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0 to 11.0 GHz. The amplifier requires a single +3V supply and one off-chip component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. The amplifier is unconditionally stable over all load states (-45 to +85°C), and conditionally stable if the input port is open-circuited.