Datasheet Details
| Part number | LP3000SOT89 |
|---|---|
| Manufacturer | Filtronic Compound Semiconductors |
| File Size | 44.16 KB |
| Description | LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT |
| Datasheet |
 LP3000SOT89 Datasheet
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General Description
AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography.
Key Features
- S.
- 29 dBm Output Power at 1-dB Compression at 1.8 GHz.
- 15 dB Power Gain at 1.8 GHz.
- 1.3 dB Noise Figure.
- 46 dBm Output IP3 at 1.8 GHz.
- 55% Power-Added Efficiency.