LP7612 Description
AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.
LP7612 Key Features
- 21 dBm Output Power at 1-dB pression at 18 GHz
- 9.5 dB Power Gain at 18 GHz
- 1.0 dB Noise Figure at 18 GHz
- 55% Power-Added Efficiency
- DESCRIPTION AND