Datasheet4U Logo Datasheet4U.com

LP7612 - HIGH DYNAMIC RANGE PHEMT

General Description

The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate.

Key Features

  • S.
  • 21 dBm Output Power at 1-dB Compression at 18 GHz.
  • 9.5 dB Power Gain at 18 GHz.
  • 1.0 dB Noise Figure at 18 GHz.
  • 55% Power-Added Efficiency DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7612 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE.

📥 Download Datasheet

Datasheet Details

Part number LP7612
Manufacturer Filtronic Compound Semiconductors
File Size 39.36 KB
Description HIGH DYNAMIC RANGE PHEMT
Datasheet download datasheet LP7612 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LP7618B 6 sound alarm 6 key independent or combined cycle-IC LAND-HOP MICRO-ELECTRONICS
LP7618B 6 sound alarm 6 key independent or combined cycle-IC Silvan Chip
LP701 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Polyfet RF Devices
LP702 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Polyfet RF Devices
LP7100B Tone siren Silvan Chip

Other Datasheets by Filtronic Compound Semiconductors

Part Number Description
LP7612P70 PACKAGED HIGH DYNAMIC RANGE PHEMT
LP750 0.5 W POWER PHEMT
LP750P100 PACKAGED 0.5 WATT POWER PHEMT
LP750SOT89 LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
LP7512 ULTRA LOW NOISE PHEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7612 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm) • DESCRIPTION AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.