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LP7612 - HIGH DYNAMIC RANGE PHEMT

Datasheet Summary

Description

The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate.

Features

  • S.
  • 21 dBm Output Power at 1-dB Compression at 18 GHz.
  • 9.5 dB Power Gain at 18 GHz.
  • 1.0 dB Noise Figure at 18 GHz.
  • 55% Power-Added Efficiency DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7612 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE.

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Datasheet Details

Part number LP7612
Manufacturer Filtronic Compound Semiconductors
File Size 39.36 KB
Description HIGH DYNAMIC RANGE PHEMT
Datasheet download datasheet LP7612 Datasheet
Additional preview pages of the LP7612 datasheet.

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Full PDF Text Transcription

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HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7612 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm) • DESCRIPTION AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.
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