Datasheet4U Logo Datasheet4U.com

LPA6836V - MEDIUM POWER PHEMT WITH SOURCE VIAS

Description

AND APPLICATIONS DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm) The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam d

Features

  • S.
  • 25 dBm Output Power at 1-dB Compression at 18 GHz.
  • 9.5 dB Power Gain at 18 GHz.
  • 55% Power-Added Efficiency.
  • Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD.

📥 Download Datasheet

Datasheet preview – LPA6836V

Datasheet Details

Part number LPA6836V
Manufacturer Filtronic Compound Semiconductors
File Size 70.02 KB
Description MEDIUM POWER PHEMT WITH SOURCE VIAS
Datasheet download datasheet LPA6836V Datasheet
Additional preview pages of the LPA6836V datasheet.

📁 Similar Datasheet

  • LPA670 - SIDELED (OSRAM)
  • LPA672 - Super SIDELED High-Current LED (Siemens)
  • LPA672 - High-Current LED (OSRAM)
  • LPA1078 - G.Shdsl Line LPAnsformer (Link-PP)
  • LPA2010 - Filterless 3W Class-D Mono Audio Amplifier (ChipSourceTek)
  • LPA2038 - ADSL Line LPAnsformer (Link-PP)
  • LPA2064 - ADSL Line LPAnsformers (Link-PP)
  • LPA2068 - ADSL Line LPAnsformers (Link-PP)
  • LPA2088 - ADSL Line LPAnsformer (Link-PP)
  • LPA2101 - Filterless 30W Class F Mono Audio Amplifier (ChipSourceTek)
Other Datasheets by Filtronic Compound Semiconductors
  • LPA6836V - MEDIUM POWER PHEMT WITH SOURCE VIAS

Full PDF Text Transcription

Click to expand full text
Preliminary Data Sheet • FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD • DESCRIPTION AND APPLICATIONS DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm) The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
Published: |