Datasheet Summary
Preliminary Data Sheet
- Features
- 25 dBm Output Power at 1-dB pression at 18 GHz
- 9.5 dB Power Gain at 18 GHz
- 55% Power-Added Efficiency
- Source Vias to Backside Metallization
DRAIN BOND PAD
MEDIUM POWER PHEMT WITH SOURCE VIAS
GATE BOND PAD
- DESCRIPTION AND APPLICATIONS
DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm)
The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic...