LPS200 - HIGH PERFORMANCE LOW NOISE PHEMT

Filtronic Compound Semiconductors

General Description

AND APPLICATIONS The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.

Key Features

S.
1.0 dB Noise Figure at 18 GHz.
10 dB Associated Gain at 18 GHz.
Low DC Power Consumption LPS200 GATE BOND PAD (2X) SOURCE BOND PAD (2x) DRAIN BOND PAD (2X) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE.

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LPS200 high performance low noise phemt by Filtronic Compound Semiconductors - Datasheet Preview

Datasheet Details

Part number	LPS200
Manufacturer	Filtronic Compound Semiconductors
File Size	29.79 KB
Description	HIGH PERFORMANCE LOW NOISE PHEMT
Datasheet	LPS200 Datasheet

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HIGH PERFORMANCE LOW NOISE PHEMT • FEATURES ♦ 1.0 dB Noise Figure at 18 GHz ♦ 10 dB Associated Gain at 18 GHz ♦ Low DC Power Consumption LPS200 GATE BOND PAD (2X) SOURCE BOND PAD (2x) DRAIN BOND PAD (2X) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.3X2.6 mils (85x65 µm) • DESCRIPTION AND APPLICATIONS The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.