LPS200
LPS200 is manufactured by Filtronic Compound Semiconductors.
HIGH PERFORMANCE LOW NOISE PHEMT
- Features
- 1.0 dB Noise Figure at 18 GHz
- 10 dB Associated Gain at 18 GHz
- Low DC Power Consumption
GATE BOND PAD (2X) SOURCE BOND PAD (2x)
DRAIN BOND PAD (2X)
DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.3X2.6 mils (85x65 µm)
- DESCRIPTION AND APPLICATIONS The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and...
