LPS200 Description
AND APPLICATIONS The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range.
LPS200 Key Features
- 1.0 dB Noise Figure at 18 GHz
- 10 dB Associated Gain at 18 GHz
- Low DC Power Consumption
- DESCRIPTION AND