LPV1500 - PACKAGED LOW NOISE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LPV1500
Manufacturer	Filtronic Compound Semiconductors
File Size	33.36 KB
Description	PACKAGED LOW NOISE PHEMT
Datasheet	LPV1500 Datasheet
Additional preview pages of the LPV1500 datasheet.

Product details

Description

AND APPLICATIONS The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimized for reliable high-power applications.The LP1V500 also

Features

LPV1500 1 W Power PHEMT DRAIN DRAIN.
+31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias SOURCE GATE DIE SIZE: 16.5 x 16.1 mils (420 x 410 µm) DIE.

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Published: Apr 25, 2005 |