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LPV1500 - PACKAGED LOW NOISE PHEMT

General Description

The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate.

Key Features

  • LPV1500 1 W Power PHEMT DRAIN DRAIN.
  • +31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias SOURCE GATE DIE SIZE: 16.5 x 16.1 mils (420 x 410 µm) DIE.

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Datasheet Details

Part number LPV1500
Manufacturer Filtronic Compound Semiconductors
File Size 33.36 KB
Description PACKAGED LOW NOISE PHEMT
Datasheet download datasheet LPV1500 Datasheet

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Part Number Description
LPV3000 2W Power PHEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Filtronic Solid State FEATURES LPV1500 1 W Power PHEMT DRAIN DRAIN • • • • • • +31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias SOURCE GATE DIE SIZE: 16.5 x 16.1 mils (420 x 410 µm) DIE THICKNESS: 3.0 mils (75 µm typ.) BONDING PADS: 1.9 x 2.4 mils (50 x 60 µm typ.) DESCRIPTION AND APPLICATIONS The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.