Datasheet Summary
Filtronic
Solid State
Features
1 W Power PHEMT
DRAIN DRAIN
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+31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias
SOURCE GATE
DIE SIZE: 16.5 x 16.1 mils (420 x 410 µm) DIE THICKNESS: 3.0 mils (75 µm typ.) BONDING PADS: 1.9 x 2.4 mils (50 x 60 µm typ.)
DESCRIPTION AND APPLICATIONS
The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate...