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LPV3000 - 2W Power PHEMT

General Description

The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate.

Key Features

  • DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT.
  • +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD (x4) DIE SIZE: 28.3 x 16.5 mils (720 x 420 µm) DIE.

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Datasheet Details

Part number LPV3000
Manufacturer Filtronic Compound Semiconductors
File Size 49.75 KB
Description 2W Power PHEMT
Datasheet download datasheet LPV3000 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Filtronic Solid State FEATURES DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT • • • • • +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD (x4) DIE SIZE: 28.3 x 16.5 mils (720 x 420 µm) DIE THICKNESS: 2.6 mils (65 µm typ.) BONDING PADS: 1.9 x 2.4 mils (50 x 60 µm typ.) DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.