Description
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate.
Features
- DRAIN PAD (x4)
LP3000/LPV3000
2W Power PHEMT.
- +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz
SOURCE BOND PAD (x2)
GATE PAD (x4)
DIE SIZE: 28.3 x 16.5 mils (720 x 420 µm) DIE.
LPV3000 Datasheet
