LPV3000 - 2W Power PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LPV3000
Manufacturer	Filtronic Compound Semiconductors
File Size	49.75 KB
Description	2W Power PHEMT
Datasheet	LPV3000 Datasheet
Additional preview pages of the LPV3000 datasheet.

Product details

Description

AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimized for reliable high-power applications.The LP3000 also

Features

DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT.
+33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD (x4) DIE SIZE: 28.3 x 16.5 mils (720 x 420 µm) DIE.

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Published: Apr 25, 2005 |