FIR120N055PG Datasheet | First Semiconductor

N-Channel Enhancement Mode Power Mosfet Description The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability Application ƽ Power switching application ƽ Hard Switched and High Frequency Circuits ƽ Uninterruptible Power Supply PIN Connection TO-220AB Marking Diagram YAWW FIR120N055P = Year = Assembly Location = Work Week FIR120N055P = Specific Device Code Package Marking And Ordering Information Device Marking Device Device Package FIR120N055P FIR120N055PG TO-220 Reel Size - Tape width - Quantity -...