FIR120N055PG - N-Channel Enhancement Mode Power Mosfet

Product Overview

First Semiconductor

Part number	FIR120N055PG
Manufacturer	First Semiconductor
File Size	4.61 MB
Description	N-Channel Enhancement Mode Power Mosfet
Datasheet	FIR120N055PG Datasheet
Additional preview pages of the FIR120N055PG datasheet.

The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

ƽ VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability.

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Published: Feb 4, 2025 |