FIR120N055PG Overview
The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FIR120N055PG Key Features
- Tape width
- Quantity
FIR120N055PG datasheet by First Semiconductor.
| Part number | FIR120N055PG |
|---|---|
| Datasheet | FIR120N055PG-FirstSemiconductor.pdf |
| File Size | 4.61 MB |
| Manufacturer | First Semiconductor |
| Description | N-Channel Enhancement Mode Power Mosfet |
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The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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