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FIR120N055PG Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: First Semiconductor

Overview: N-Channel Enhancement Mode Power Mosfet.

Datasheet Details

Part number FIR120N055PG
Manufacturer First Semiconductor
File Size 4.61 MB
Description N-Channel Enhancement Mode Power Mosfet
Datasheet FIR120N055PG-FirstSemiconductor.pdf

General Description

The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • ƽ VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability.

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