FIR140N098RG Datasheet | First Semiconductor

FIR140N098PG/RG Features Uses split-gate technology Extremely low on-resistance RDS(on) Excellent Qgx RDS(on) product Qualified according to JEDEC criteria Application Motor Drivers UPS (Uninterruptible Power Supplies) DC/DC converter General purpose applications VDS RDS(on)@VGS=10V ID 98V 5.2mΩ 140A TO-220AB TO-263 Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C TC = 100°C Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse Gate-Source voltage Power dissipation TC = 25°C Operating junction and storage temperature @ 2018 Copyright By American First Semiconductor Symbol VDS ID pulse EAS VGS Ptot Tj , Tstg Value 98 140 100 689 ±20 200 -55...+150 Unit V A m J V W ℃ REV:1.0 Page 1/7 Thermal Resistance Parameter Thermal resistance, junction - case. Max Thermal resistance, junction - ambient. Max FIR140N098PG/RG Symbol Rth JC Rth JA Value 0.62 62.0 Unit ℃/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter...