FIR150N06PG Overview
The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FIR150N06PG Key Features
- Tape width
- Quantity
FIR150N06PG Datasheet Details
| Part number | FIR150N06PG |
|---|---|
| Datasheet | FIR150N06PG-FirstSemiconductor.pdf |
| File Size | 4.05 MB |
| Manufacturer | First Semiconductor |
| Description | N-Channel Enhancement Mode Power Mosfet |
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