FIR150N06PG Description
The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FIR150N06PG Key Features
- Tape width
- Quantity
- Part: FIR150N06PG
- Manufacturer: First Semiconductor
- Size: 4.05 MB
Related First Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FIR120N055PG | N-Channel Enhancement Mode Power Mosfet |
| FIR140N098PG | Power Mosfet |
| FIR140N098RG | Power Mosfet |
| FIR2N60FG | Advanced N-Ch Power MOSFET |
| FIR3441AG | P-Channel Enhancement Mode Power MOSFET |