FIR150N06PG - N-Channel Enhancement Mode Power Mosfet

First Semiconductor

General Description

The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

ƽ VDS =60V,ID =150A RDS(ON).

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FIR150N06PG n-channel enhancement mode power mosfet by First Semiconductor - Datasheet Preview

Datasheet Details

Part number	FIR150N06PG
Manufacturer	First Semiconductor
File Size	4.05 MB
Description	N-Channel Enhancement Mode Power Mosfet
Datasheet	FIR150N06PG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power Mosfet Description The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ VDS =60V,ID =150A RDS(ON) <4.