FIR150N06PG Overview
Description
The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
| Part | FIR150N06PG |
|---|---|
| Description | N-Channel Enhancement Mode Power Mosfet |
| Category | MOSFET |
| Manufacturer | First Semiconductor |
| Size | 4.05 MB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |