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FIR2N60FG - Advanced N-Ch Power MOSFET

Key Features

  • High Voltage: BVDSS=600V(Min. ).
  • Low Crss : Crss=3.4F(Typ. ).
  • Low gate charge : Qg= 7.0nC(Typ. ).
  • Low RDS(on) :RDS(on)=7.0Ω(Max. ) G D S D G S Marking Diagram Y A YAWW = Year = Assembly Location = Work Week WW FIR2N60F FIR2N60F = Specific Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC).
  • Drain current (Pulsed) Power dissipation Avalanche current (S.

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Datasheet Details

Part number FIR2N60FG
Manufacturer First Semiconductor
File Size 890.88 KB
Description Advanced N-Ch Power MOSFET
Datasheet download datasheet FIR2N60FG Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FIR2N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=3.4F(Typ.) • Low gate charge : Qg= 7.0nC(Typ.) • Low RDS(on) :RDS(on)=7.0Ω(Max.