Part FIR3441AG
Description P-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer First Semiconductor
Size 1.42 MB
First Semiconductor

FIR3441AG Overview

Description

The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package