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FIR3441AG - P-Channel Enhancement Mode Power MOSFET

Product Overview

First Semiconductor

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FIR3441AG P-Channel Enhancement Mode Power MOSFET by First Semiconductor - Datasheet Preview — Datasheet preview – FIR3441AG

Datasheet Details

Part number	FIR3441AG
Manufacturer	First Semiconductor
File Size	1.42 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	FIR3441AG Datasheet
Additional preview pages of the FIR3441AG datasheet.

Product details

Description

The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: May 22, 2015 |