FIR3441AG - P-Channel Enhancement Mode Power MOSFET

First Semiconductor

General Description

The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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FIR3441AG p-channel enhancement mode power mosfet by First Semiconductor - Datasheet Preview

Datasheet Details

Part number	FIR3441AG
Manufacturer	First Semiconductor
File Size	1.42 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	FIR3441AG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET Description The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features • VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.