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FIR3441AG Datasheet PDF

First Semiconductor FIR3441AG

The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Part No. FIR3441AG
Datasheet FIR3441AG Download
Manufacturer
First Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
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FIR3441AG datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

● VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
● PWM applications
● Load switch
● Power management FIR3441AG Top vlew SOT-23 D G S D G S Schematic diagram Marking and pin Assignment Package Marking And Ordering Information Device Marking Device Device Package 3401A NCE3401A SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units

ABSOLUTE MAXIMUM RATINGS

(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range ID IDM PD TJ,TSTG Limit -30 ±12 -4.4 -30 1.3 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 95 ℃/W

ELECTRICAL CHARACTERISTICS

(TA=25℃unless otherwise noted) Parameter Symbol Condition O...
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