FIR80N075PG - N-Channel Power MOSFET

First Semiconductor

General Description

The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Key Features

ƽ VDS=75V；ID=80A@ VGS=10V； RDS(ON).

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FIR80N075PG n-channel power mosfet by First Semiconductor - Datasheet Preview

Datasheet Details

Part number	FIR80N075PG
Manufacturer	First Semiconductor
File Size	3.23 MB
Description	N-Channel Power MOSFET
Datasheet	FIR80N075PG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET General Description The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.