FIR8N60FG Overview
Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. (1) Pulse duration ≤300μs, duty cycle ≤2% 16 RDS(on) - On-State Resistance (mΩ) 14 12 10 8 6 4 2 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 75A TC = 125ºC Id = 75A GATE CHARGE 10 ID = 75A VDS = 20V 8 6 4 2 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 0 0 5 10 15 20 Qg - Gate Charge (nC) 25 30 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
