FTB1366 - PNP Transistor

First Silicon

Key Features

Low VCE(sat): VCE(sat)=-1.0V(Max. )(IC/IB=-2A/-0.2A) Complementary to FTD2058 TO-220F 1. BASE 2.

FTB1366 pnp transistor by First Silicon - Datasheet Preview

Datasheet Details

Part number	FTB1366
Manufacturer	First Silicon
File Size	250.84 KB
Description	PNP Transistor
Datasheet	FTB1366 Datasheet

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SEMICONDUCTOR TECHNICAL DATA FTB1366 FTB1366 TRANSISTOR (PNP) FEATURES Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) Complementary to FTD2058 TO-220F 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -3 A PC Collector power dissipation 2W TJ Junction temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3.