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SEMICONDUCTOR
TECHNICAL DATA
FTB1412
FTB1412
FEATURES
TRANSISTOR (PNP)
A C I J D
Power Amplifier Applications
DIM A B C D E F H I J L O Q MILLIMETERS 6 50 ± 0 2 5 60 ± 0 2 5 20 ± 0 2 1 50 ± 0 2 2 70 ± 0 2 2 30 ± 0 1 1 00 MAX 2 30 ± 0 2 05± 01 0 50 ± 0 10 16± 02 0 95 MAX
E
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -20 -6 -5 1 150 -55-150 Unit V V V A W ℃ ℃
Q
B
H F 1 2 F 3 L
1 BASE 2 COLLECTOR 3 EMITTER
DPAK
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitt
FTB1412 Datasheet
