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FTK1N60P - N-CHANNEL MOSFET

Description

The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • RDS(ON) = 9 .6Ω@VGS =10V.
  • Ultra Low gate charge (typical 5.0nC).
  • Low reverse transfer capacitance (CRSS = typical 3.5 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness SYMBOL 2 Drain Power MOSFET I: 1 D: 1 TO - 251 TO - 252 P: 1 TO - 220 F: 1 TO - 220F 1.Gate 3 Source.

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Datasheet Details

Part number FTK1N60P
Manufacturer First Silicon
File Size 215.55 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet FTK1N60P Datasheet

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SEMICONDUCTOR TECHNICAL DATA FTK1N60P / F / D / I 1.0 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 9 .6Ω@VGS =10V * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.
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