First Silicon MJE13003A
TRIPLE DIFFUSED NPN TRANSISTOR
| Part No. | MJE13003A |
|---|---|
| Datasheet | MJE13003A Download |
| Manufacturer |  First Silicon |
| Description | TRIPLE DIFFUSED NPN TRANSISTOR |
| Buy | Stock & Price |
FEATURES
Excellent Switching Times : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1.5A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25˚C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Collector Current DC Pulse Collector Power Dissipation VEBO IC ICP IB Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING 700 400 9 1.5 3 0.75 1.1 150 -55~150 UNIT V V V A A W ˚C ˚C L M C MJE13003A TRIPLE DIFFUSED NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4 70 MAX B 4 80 MAX C 3 70 MAX D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 J 14 00 +_0 50 K 0 55 MAX L 2 30 M 0 45 MAX N 1 00 1 EMITTER 2 COLLECTOR 3 BASE TO-92ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency IEBO hFE(1) (Note) hFE(2) VCE(sat) VBE(sat) fT VEB=9V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=1...