Micro Commercial Components MJE13003A
NPN Silicon Transistor
FEATURES
● Capable of 1.25Watts of Power Dissipation.● Collector-current 1.5A
● Collector-base Voltage 700V
● Operating and storage junction temperature range: -55OC to +150OC
● Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
ELECTRICAL CHARACTERISTICS
@ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) Collector-Base Breakdown Voltage (IC=1000uAdc, IE=0) Emitter-Base Breakdown Voltage (IE=1000uAdc, IC=0) Collector Cutoff Current (VCB=700Vdc, IE=0) Collector Cutoff Current (VCE=400Vdc,IB=0) Emitter Cutoff Current (VEB=9.0Vdc, IC=0) 400 Vdc 700 Vdc 9.0 Vdc 1000 uAdc 500 uAdc 1000 uAdc ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VBE DC Current Gain (IC=0.5Adc, VCE=5.0Vdc) DC Current Gain (IC=1.5mAdc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=1000mAdc, IB=250mAdc) Base-Emitter Saturation Voltage (IC=1000mAdc, IB=250m...