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8205 Datasheet Dual N-channel Power MOSFET

Manufacturer: Fortune Semiconductor

Overview: REV. 1.9 FS8205-DS-19_EN AUG 2016 For RefPerrFoepOnecRrteTieUOsnNlEy’ Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET Fortune Semiconductor Corporation 富晶電子股份有限公司 23F.,No.29-5, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.:886-2-28094742 Fax:886-2-28094874 .ic-fortune. FS8205 For RefPerrFoepOnecRrteTieUOsnNlEy’ This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent acpany the sale of the product Rev. 1.9 2/2 FS8205 1.

Datasheet Details

Part number 8205
Manufacturer Fortune Semiconductor
File Size 726.48 KB
Description Dual N-Channel Power MOSFET
Datasheet 8205-FortuneSemiconductor.pdf

General Description

FS8205 SOT23-6 package version 4.

Pin Assignment Package Type SOT23-6 Quantity/Reel 3,000 For RefPerrFoepOnecRrteTieUOsnNlEy’ For FS8205 w : A~Z or A ~ Z Top points, bottom points & w: Lot no information 5.

Absolute Maximum Ratings Symbol VDS VGS ID @TA = 25℃ ID @TA = 70℃ IDM PD @TA = 25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rev.

Key Features

  • 1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A) 2.

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