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8205 - Dual N-Channel Power MOSFET

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Description

4.

5.

Features

  • 1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A) 2.

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Datasheet Details

Part number 8205
Manufacturer Fortune Semiconductor
File Size 726.48 KB
Description Dual N-Channel Power MOSFET
Datasheet download datasheet 8205 Datasheet
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    REV. 1.9 FS8205-DS-19_EN AUG 2016 For RefPerrFoepOnecRrteTieUOsnNlEy’ Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET Fortune Semiconductor Corporation 23F.,No.29-5, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874 www.ic-fortune.com FS8205 For RefPerrFoepOnecRrteTieUOsnNlEy’ This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product Rev. 1.9 2/2 FS8205 1. Features 1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.
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