Datasheet4U Logo Datasheet4U.com

3DA2688 - SILICON NPN TRANSISTOR

Key Features

  • Low Cre, high fT. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 300 V VCEO 300 V VEBO 5.0 V IC 200 mA PC(Ta=25℃) 1.25 W PC(Tc=25℃) 10 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol ICBO IEBO hFE VCE(sat) fT Cre Test condition VCB=200V VEB=5.0V VCE=10V IC=50mA VCE=30V VCB=30V IE=0 IE=0 IC=0 IC=10mA IB=5.0mA IC=10mA f=1.0MHz Min 40 50 Rating Typ 80 Max 0.1 0.1 250 1.5 3.0 Unit μA μA V MHz pF hFE /hFE classifications: N:40～80.

📥 Download Datasheet

Datasheet Details

Part number 3DA2688
Manufacturer Foshan Eming Electronics
File Size 197.72 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 3DA2688 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
3DA2073A SILICON NPN TRANSISTOR FOSHAN BLUE ROCKET
3DA2092 Silicon NPN transistor BLUE ROCKET ELECTRONICS
3DA2396 SILICON NPN TRANSISTOR FOSHAN BLUE ROCKET
3DA27 NPN Transistor Qunli
3DA27C NPN Transistor INCHANGE

Other Datasheets by Foshan Eming Electronics

Part Number Description
3DA3807 SILICON NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SC2688(3DA2688) NPN /SILICON NPN TRANSISTOR :。 Purpose: Color TV chroma output circuits. :Cre ,fT 。 Features: Low Cre, high fT. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 300 V VCEO 300 V VEBO 5.0 V IC 200 mA PC(Ta=25℃) 1.25 W PC(Tc=25℃) 10 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol ICBO IEBO hFE VCE(sat) fT Cre Test condition VCB=200V VEB=5.0V VCE=10V IC=50mA VCE=30V VCB=30V IE=0 IE=0 IC=0 IC=10mA IB=5.0mA IC=10mA f=1.0MHz Min 40 50 Rating Typ 80 Max 0.1 0.1 250 1.5 3.