A2I20D020GNR1 Overview
Freescale Semiconductor Technical Data Document Number: 0, 5/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20D020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1400 to 2200 MHz. This multi--stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.
A2I20D020GNR1 Key Features
- Extremely Wide RF Bandwidth
- RF Decoupled Drain Pins Reduce Overall Board Space
- On--Chip Matching (50 Ohm Input, DC Blocked)
- 0.5, +65 -0.5, +10