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Freescale Semiconductor Technical Data
Document Number: A2I20D020N Rev. 0, 5/2016
RF LDMOS Wideband Integrated Power Amplifiers
The A2I20D020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1400 to 2200 MHz. This multi--stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.
1800–2200 MHz
Typical Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 32 mA, IDQ2(A+B) = 110 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency
Gps (dB)
PAE (%)
1800 MHz
31.0 19.7
1900 MHz
31.0 21.7
2000 MHz
31.1 22.1
2100 MHz
31.4 21.1
2200 MHz
32.0 19.6
1. All data measured in fixture with device soldered to heatsink.
A2I20D020NR1 Datasheet
