• Part: A2I20D020NR1
  • Description: RF LDMOS Wideband Integrated Power Amplifiers
  • Manufacturer: Freescale Semiconductor
  • Size: 432.51 KB
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Datasheet Summary

Freescale Semiconductor Technical Data Document Number: A2I20D020N Rev. 0, 5/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20D020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1400 to 2200 MHz. This multi--stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats. 1800- 2200 MHz - Typical Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ1(A+B) = 32 mA, IDQ2(A+B) = 110 mA, Pout = 2.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) Frequency Gps (dB) PAE (%) 1800 MHz 31.0 19.7 1900 MHz 31.0 21.7 2000 MHz 31.1 22.1 2100 MHz 31.4...