Datasheet4U.com

MMG20271H9T1 - pHEMT

Product Overview

Freescale Semiconductor

📥 Download Datasheet

MMG20271H9T1 pHEMT by Freescale Semiconductor - Datasheet Preview — Datasheet preview – MMG20271H9T1

Datasheet Details

Part number	MMG20271H9T1
Manufacturer	Freescale Semiconductor
File Size	708.17 KB
Description	pHEMT
Datasheet	MMG20271H9T1 Datasheet
Additional preview pages of the MMG20271H9T1 datasheet.

Product details

Description

Figure 1.

RF Device Data Freescale Semiconductor, Inc.

Features

Frequency: 1500--2700 MHz.
Noise Figure: 1.7 dB @ 2140 MHz.
P1dB: 27.5 dBm @ 2140 MHz.
Small--Signal Gain: 16 dB @ 2140 MHz.
Third Order Output Intercept Point: 43.1 dBm @ 2140 MHz.
Class 2 HBM ESD Immunity.
Single 5 V Supply.
Supply Current: 215 mA.
50 Ohm Operation (some external matching required).
Cost--effective SOT--89 Surface Mount Plastic Package.
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. 1500--2700.

📁 Similar Datasheet

MMG2001R2 - Gallium Arsenide CATV Integrated Amplifier (Motorola)
MMG200B065PD6EN - IGBT (MacMic)
MMG200D120B6HN - IGBT (MacMic)
MMG200D120B6TC - IGBT (MacMic)
MMG200D120B6TN - IGBT (MacMic)
MMG200D120B6UC - IGBT (MacMic)
MMG200D120UA6TC - IGBT (MacMic)
MMG200D120UA6TN - IGBT (MacMic)

Other Datasheets by Freescale Semiconductor

MMG20271HT1 - pHEMT
MMG2001T1 - Gallium Arsenide CATV Integrated Amplifier
MMG1001NT1 - Gallium Arsenide CATV Integrated Amplifier
MMG1001T1 - Gallium Arsenide CATV Integrated Amplifier
MMG15241HT1 - pHEMT
MMG3001NT1 - Heterojunction Bipolar Transistor

Published: Nov 28, 2014 |