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MMG20271H9T1 - pHEMT

General Description

Figure 1.

RF Device Data Freescale Semiconductor, Inc.

Key Features

  • Frequency: 1500--2700 MHz.
  • Noise Figure: 1.7 dB @ 2140 MHz.
  • P1dB: 27.5 dBm @ 2140 MHz.
  • Small--Signal Gain: 16 dB @ 2140 MHz.
  • Third Order Output Intercept Point: 43.1 dBm @ 2140 MHz.
  • Class 2 HBM ESD Immunity.
  • Single 5 V Supply.
  • Supply Current: 215 mA.
  • 50 Ohm Operation (some external matching required).
  • Cost--effective SOT--89 Surface Mount Plastic Package.
  • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. 1500--2700.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology (E--pHEMT) High Linearity Amplifier Document Number: MMG20271H9 Rev. 1, 9/2014 MMG20271H9T1 The MMG20271H9 is a high dynamic range, single--stage, low noise amplifier MMIC, housed in a SOT--89 standard plastic package. With high OIP3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a second-- stage LNA in the receive chain. It is ideal for cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the 1500 to 2700 MHz frequency range. Features  Frequency: 1500--2700 MHz  Noise Figure: 1.7 dB @ 2140 MHz  P1dB: 27.5 dBm @ 2140 MHz  Small--Signal Gain: 16 dB @ 2140 MHz  Third Order Output Intercept Point: 43.