Datasheet4U Logo Datasheet4U.com

MMG20271HT1 - pHEMT

General Description

RF input for the power amplifier.

RFin has an RF choke to ground internal to the package.

No external blocking is necessary unless externally applied DC is present on the trace.

Key Features

  • Frequency: 1500--2700 MHz.
  • Noise Figure: 1.7 dB @ 2140 MHz.
  • P1dB: 27.5 dBm @ 2140 MHz.
  • Small--Signal Gain: 16 dB @ 2140 MHz.
  • Third Order Output Intercept Point: 42 dBm @ 2140 MHz.
  • Single 5 V Supply.
  • Supply Current: 180 mA.
  • 50 Ohm Operation (some external matching required).
  • Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package.
  • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG20271H Rev. 1.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology (E--pHEMT) High Linearity Amplifier The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3  3 standard plastic package. It is ideal for Cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the 1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a second stage LNA in the receive chain. Features  Frequency: 1500--2700 MHz  Noise Figure: 1.7 dB @ 2140 MHz  P1dB: 27.