Datasheet4U Logo Datasheet4U.com

MML20242HT1 - Enhancement Mode pHEMT

Description

Part Number C1, C5 18 pF Chip Capacitors GJM1555C1H180GB01 C2, C3, C8, C11, C12 18 pF Chip Capacitors GRM1555C1H180JA01 C4, C10, C13 0.1 F Chip Capacitors GRM155R61A104K01 C6, C9 Components Not Placed C7 0.6 pF Chip Capacitor GJM1555C1HR60WB01 L1 3.3 nH Chip Inductor 0402HP--3N3XJ

Features

  • Low Noise Figure: 0.59 dB @ 1950 MHz.
  • Frequency: 1400--2800 MHz.
  • Unconditionally Stable over Temperature.
  • High Reverse Isolation: --51 dB @ 1950 MHz.
  • P1dB: 24 dBm @ 1950 MHz.
  • Small--Signal Gain: 34 dB @ 1950 MHz.
  • Third Order Output Intercept Point: 39.5 dBm @ 1950 MHz.
  • Active Bias Control (adjustable externally).
  • Single 5 V Supply.
  • Supply Current: 160 mA.
  • 50 Ohm Operation (some external matching required).
  • Cost--effective 12--pin, 3 mm.

📥 Download Datasheet

Datasheet preview – MML20242HT1

Datasheet Details

Part number MML20242HT1
Manufacturer Freescale Semiconductor
File Size 554.60 KB
Description Enhancement Mode pHEMT
Datasheet download datasheet MML20242HT1 Datasheet
Additional preview pages of the MML20242HT1 datasheet.

📁 Similar Datasheet

  • MML204 - METAL FILM RESISTOR (HITANO)
  • MML207 - METAL FILM RESISTOR (HITANO)
  • MML102 - METAL FILM RESISTOR (HITANO)
  • MML1225 - TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS (Dc Components)
  • MML4401 - MRI Protection Diodes (Microsemi)
  • MML4402 - MRI Protection Diodes (Microsemi)
  • MML4403 - MRI Protection Diodes (Microsemi)
  • MML60R190P - N-channel MOSFET (MagnaChip)
  • MML60R290P - N-channel MOSFET (MagnaChip)
  • MMLH45F - TMR Linear Sensor (MultiDimension)
Other Datasheets by Freescale Semiconductor

Full PDF Text Transcription

Click to expand full text
Freescale Semiconductor Technical Data Document Number: MML20242H Rev. 2, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier The MML20242H is a 2--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front--end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 1400 to 2800 MHz such as TD -- SCDMA, W -- CDMA, UMTS, PCS, LTE and BWA. Features  Low Noise Figure: 0.
Published: |