Datasheet Summary
Freescale Semiconductor Technical Data
Document Number: MRF1570N Rev. 9, 6/2008
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large
- signal, mon source amplifier applications in 12.5 volt mobile FM equipment.
- Specified Performance @ 470 MHz, 12.5 Volts Output Power
- 70 Watts Power Gain
- 11.5 dB Efficiency
- 60%
- Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive Features
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal...