MRF1570FNT1 Overview
Freescale Semiconductor Technical Data Document Number: 9, 6/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon source amplifier applications in 12.5 volt mobile FM equipment.
MRF1570FNT1 Key Features
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Broadband
- Full Power Across the Band: 135
- 175 MHz .. 400
- 470 MHz
- Broadband Demonstration Amplifier Information Available Upon Request
- 200_C Capable Plastic Package
- N Suffix Indicates Lead
MRF1570FNT1 Applications
- signal, mon source amplifier applications in 12.5 volt mobile FM equipment