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MRF1570NT1 - RF Power Field Effect Transistors

Key Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Broadband - Full Power Across the Band: 135 - 175 MHz www. DataSheet4U. com 400 - 470 MHz.
  • Broadband Demonstration Amplifier Information Available Upon Request.
  • 200_C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1570NT1 MRF1.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF1570FNT1 RF Power Field Effect Transistors
MRF1513NT1 RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET
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MRF1550FNT1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 Volts Output Power — 70 Watts Power Gain — 11.5 dB Efficiency — 60% • Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Broadband - Full Power Across the Band: 135 - 175 MHz www.DataSheet4U.