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MRF18085ALSR3 - RF Power Field Effect Transistors

Download the MRF18085ALSR3 datasheet PDF. This datasheet also covers the MRF18085AR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • F RF Device Data Freescale Semiconductor MRF18085AR3 MRF18085ALSR3 5-7 How to Reach Us: Home Page: www. freescale. com E - mail: support@freescale. com USA/Europe or Locations Not Listed: Freescale Semiconductor.

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Note: The manufacturer provides a single datasheet file (MRF18085AR3-FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/ cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805 - 1880 MHz.