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MRF18085ALSR3 - RF Power Field Effect Transistor

Download the MRF18085ALSR3 datasheet PDF. This datasheet also covers the MRF18085A variant, as both devices belong to the same rf power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF18085A_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18085A/D Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM–GSM EDGE 1805 – 1880 MHz.