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MRF19085LSR3 - RF Power Field Effect Transistors

Download the MRF19085LSR3 datasheet PDF. This datasheet also covers the MRF19085LR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Part Number Manufacturer B1 C1 C2, C7 C3, C9 C4, C10 C5 C6 C8 C11, C12 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Board PCB Short Ferrite Bead 51 pF Chip Capacitor 5.1 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 0.1 μF Tantalum Surface Mount Capacitor 10 pF Chip Capacito

Key Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF19085LR3-FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF19085LSR3 RF Power Field Effect Transistors Motorola
MRF19085LR3 RF Power Field Effect Transistors Motorola
MRF19085R3 RF Power Field Effect Transistors Motorola
MRF19085SR3 RF Power Field Effect Transistors Motorola
MRF19030LR3 The RF MOSFET Line RF Power Field Effect Transistors Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF19085LR3 RF Power Field Effect Transistors
MRF19060LR3 RF Power Field Effect Transistors
MRF19060LSR3 RF Power Field Effect Transistors
MRF19090R3 RF Power Field Effect Transistors
MRF19090SR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance IISDQ- 9=58C5D0MmAA,(PPioloutt,=S1y8ncW, PatatsginAgv,gT.,rfa1ff=ic 1fo9r6V0DMDH=z2, 6f2V=ol1ts9,62.5 Codes 8 Through 13) MHz 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 18 Watts Avg.