MRF19090R3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF19090R3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF19090R3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	382.82 KB
Description	RF Power Field Effect Transistors
Download	MRF19090R3 Download (PDF)

Overview

Freescale Semiconductor Technical Data Document Number: MRF19090 Rev.

6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.

Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications.

Key Features

Internally Matched for Ease of Use.
High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19090R3 MRF19090SR3 1930- 1990 MHz, 90 W, 26 V.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number	Description
MRF19090SR3	RF Power Field Effect Transistors
MRF19060LR3	RF Power Field Effect Transistors
MRF19060LSR3	RF Power Field Effect Transistors
MRF19085LR3	RF Power Field Effect Transistors
MRF19085LSR3	RF Power Field Effect Transistors
MRF19125R3	RF Power Field Effect Transistors
MRF1513NT1	RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET
MRF1517NT1	RF Power Field Effect Transistor
MRF1550FNT1	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF1550NT1	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs